PART |
Description |
Maker |
SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET Advanced Power MOSFET Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFIZ24NPBF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET Advanced Process Technology
|
International Rectifier
|
IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRFPS3810PBF IRFPS3810PBF-15 |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
SFS9540 |
Advanced Power MOSFET 10.7 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFRU220A IRFR_U220A IRFR220A IRFU220A IRFR/U220A |
4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET ADVANCED POWER MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|